Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Vishay

威世

Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB

NJS

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 20V VGS Max. Gate Rating ● 100 tested for Rg Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters

文件：211.13 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：265.04 Kbytes 页数：9 Pages

IRF

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：275.91 Kbytes 页数：9 Pages

IRF

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：281.46 Kbytes 页数：9 Pages

IRF

HEXFET® Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fo

文件：350.86 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：169.18 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：273.24 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MO

文件：169.02 Kbytes 页数：10 Pages

IRF