HEXFET Power MOSFET

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：273.24 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes 页数：9 Pages

IRF

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes 页数：9 Pages

IRF

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes 页数：9 Pages

IRF

50V 单个 N 通道 HEXFET Power MOSFET， 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS ， 无卤素\n• 符合MSL1，工业认证;

Infineon

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