IRF710中文资料2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRF710规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17444.
特性 Features
• 2.0A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRF710
- 功能描述：
MOSFET N-Chan 400V 2.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
95 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
onsemi(安森美) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
2016+ |
SOP8 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SILICONIX |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
20+ |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||||
IR |
24+ |
SOP8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
IR |
23+ |
TO-220 |
300 |
专做原装正品,假一罚百! |
询价 | ||
MITEL |
2023+ |
SMD |
14432 |
安罗世纪电子只做原装正品货 |
询价 |
