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IRF6618TRPBF

DirectFET짰Power MOSFET 짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618TRPBF

Ideal for CPU Core DC-DC Converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

A6618

CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AP6618GM-HF

LowOn-resistance,FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AWU6618

HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule

ANADIGICS

ANADIGICS

CGA-6618

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618

DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER

ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl

STANFORD

Stanford Microdevices

CGA-6618

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

LMH6618

130MHz,1.25mARRIOOperationalAmplifiers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

LMH6618

PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMH6618

130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

详细参数

  • 型号:

    IRF6618TRPBF

  • 功能描述:

    MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
19+
QFN
22800
询价
INFINEON/IR
15+
DirectFET MT
4800
询价
INFINEON/IR
1907+
NA
4800
20年老字号,原装优势长期供货
询价
Infineon Technologies
24+
DIRECTFET? MT
30000
晶体管-分立半导体产品-原装正品
询价
INFINEON/IR
15+
4800
DirectFET MT
询价
Infineon(英飞凌)
23+
MG-WDSON-5
11177
支持大陆交货,美金交易。原装现货库存。
询价
IR
24+
QFN
160821
明嘉莱只做原装正品现货
询价
IR
07+/08+
DirectFETtradeIso
7500
询价
IOR
2007
DIRECTFET
654
原装现货海量库存欢迎咨询
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多IRF6618TRPBF供应商 更新时间2024-7-15 15:09:00