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IRF6616

DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:269.27 Kbytes 页数:9 Pages

IRF

IRF6616

40V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET MX 封装,额定电流为106 A。

Infineon

英飞凌

IRF6616PBF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616PBF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616TR1

DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:269.27 Kbytes 页数:9 Pages

IRF

IRF6616TR1PBF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616TRPBF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616TRPBF

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616PBF_15

RoHS compliant containing no lead or bormide

文件:282.09 Kbytes 页数:10 Pages

IRF

IRF6616TRPBF

Benchmark MOSFETs Product Selection Guide

文件:2.62043 Mbytes 页数:6 Pages

IRF

技术参数

  • OPN:

    IRF6616TRPBF

  • Qualification:

    Non-Automotive

  • Package name:

    DirectFET MX (MG-WDSON-5)

  • VDS max:

    40 V

  • RDS (on) @10V max:

    5 mΩ

  • RDS (on) @4.5V max:

    6.2 mΩ

  • ID @25°C max:

    106 A

  • QG typ @4.5V:

    29 nC

  • Polarity:

    N

  • VGS(th) min:

    1.35 V

  • VGS(th) max:

    2.25 V

  • VGS(th):

    1.8 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
INFINE0N
21+
DirectFET MX
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
INFINEON
25+
DIRECTFET?
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
DirectFET? Isometric MX
9000
原厂渠道,现货配单
询价
Infineon Technologies
23+
DirectFET? Isometric MX
9000
原装正品,支持实单
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
DirectFET? 等容 MX
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Infineon Technologies
23+
原装
8000
只做原装现货
询价
Infineon Technologies
23+
原装
7000
询价
IR
24+
DirectFETtradeIso
7500
询价
更多IRF6616供应商 更新时间2025-10-4 13:01:00