IRF6616TR1中文资料IRF数据手册PDF规格书

描述 Description

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

• RoHS compliant containing no lead or bormide

• Low Profile (<0.7 mm)

• Dual Sided Cooling Compatible

• Ultra Low Package Inductance

• Optimized for High Frequency Switching

• Low Conduction and Switching Losses

• Compatible with existing Surface Mount Techniques