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IRF6626

DirectFET TM Power MOSFET

Description TheIRF6626combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6626

RoHS compliant containing no lead or bromide

Description TheIRF6626combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6626PBF

RoHs Compliant

Description TheIRF6626PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayo

IRF

International Rectifier

IRF6626TR1

RoHS compliant containing no lead or bromide

Description TheIRF6626combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6626TR1PBF

RoHs Compliant

Description TheIRF6626PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayo

IRF

International Rectifier

LMH6626

LMH6624andLMH6626Single/DualUltraLowNoiseWidebandOperationalAmplifier

TI1Texas Instruments

德州仪器

LMH6626

Single/DualUltraLowNoiseWidebandOperationalAmplifier

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMH6626MA

Single/DualUltraLowNoiseWidebandOperationalAmplifier

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMH6626MA

Single/DualUltraLowNoiseWidebandOperationalAmplifier

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMH6626MA

LMH6624/LMH6626Single/DualUltraLowNoiseWidebandOperationalAmplifier

TITexas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    IRF6626

  • 功能描述:

    MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
DirectFETtradeIso
7500
询价
IR
2016+
DirectFET
6528
房间原装进口现货假一赔十
询价
IR
23+
SOT223
7750
全新原装优势
询价
IOR
2006
DIRECTFET
491
原装现货海量库存欢迎咨询
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
20
全新原装 货期两周
询价
Infineon Technologies
21+
DIRECTFET? ST
4800
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON
1809+
DIRECTFET?
1675
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
更多IRF6626供应商 更新时间2025-5-1 16:30:00