| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6626 | DirectFET TM Power MOSFET Description The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件:632.98 Kbytes 页数:9 Pages | IRF | IRF | |
IRF6626 | RoHS compliant containing no lead or bromide Description The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件:641.93 Kbytes 页数:10 Pages | IRF | IRF | |
IRF6626 | RoHS compliant containing no lead or bromide | Infineon 英飞凌 | Infineon | |
RoHs Compliant Description The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo 文件:289.61 Kbytes 页数:10 Pages | IRF | IRF | ||
RoHS compliant containing no lead or bromide Description The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件:641.93 Kbytes 页数:10 Pages | IRF | IRF | ||
RoHs Compliant Description The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo 文件:289.61 Kbytes 页数:10 Pages | IRF | IRF |
详细参数
- 型号:
IRF6626
- 功能描述:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DirectFETtradeIso |
7500 |
询价 | |||
IOR |
2006 |
DIRECTFET |
491 |
原装现货海量库存欢迎咨询 |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? ST |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON |
25+ |
DIRECTFET? |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
25+ |
DirectFET |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
相关规格书
更多- IRF6626TR1
- IRF6629TRPBF
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相关库存
更多- IRF6628TRPBF
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