首页 >IRF6626TR1PBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6626TR1PBF | RoHs Compliant Description The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo 文件：289.61 Kbytes 页数：10 Pages | IRF | IRF | |
RoHS compliant containing no lead or bromide Description The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：641.93 Kbytes 页数：10 Pages | IRF | IRF | ||
SOP8 | IR | |||
SOP8 | IR | |||
DIRECTFET | INFINEON/英飞凌 | INFINEON/英飞凌 |
详细参数
- 型号：
IRF6626TR1PBF
- 功能描述：
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DirectFETtradeIso |
7500 |
询价 | |||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
Infineon Technologies |
21+ |
DIRECTFET? ST |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
INFINEON |
25+ |
DIRECTFET? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
25+ |
QFN |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon Technologies |
2022+ |
DirectFET? 等容 ST |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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