HEXFET Power MOSFET plus Schottky Diode

HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile (

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IRF

RoHs Compliant

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：642.47 Kbytes 页数：10 Pages

IRF

INFINEON/英飞凌
SMD

INFINEON/英飞凌

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IR
SOP8

IR

国际整流器

上传：深圳市勤思达科技有限公司

IR
SOP

IR

国际整流器

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