首页 >IRF6691TR1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6691TR1 | HEXFET Power MOSFET plus Schottky Diode HEXFETPowerMOSFETplusSchottkyDiode ●ApplicationSpecificMOSFETs ●IntegratesMonolithicTrenchSchottkyDiode ●IdealforCPUCoreDC-DCConverters ●LowConductionLosses ●LowReverseRecoveryLosses ●LowSwitchingLosses ●LowReverseRecoveryChargeandLowVf ●LowProfile( | IRF International Rectifier | IRF | |
RoHs Compliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF |
详细参数
- 型号：
IRF6691TR1
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
原厂封装 |
963 |
原装现货假一罚十 |
询价 | ||
IOR |
2007 |
DIRECTFET |
835 |
原装现货海量库存欢迎咨询 |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? MT |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
24+ |
65230 |
询价 | ||||
INFINEON |
1503+ |
DIRECTFET? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
24+ |
QFN |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 |
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