Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce

Description The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：238.94 Kbytes 页数：9 Pages

IRF

采用 DirectFET ™ ST 封装的 20V 单 N 通道功率 MOSFET

StrongIRFET™ 功率 MOSFET 系列针对低 RDS(on) 和高电流能力进行了优化。 这些器件非常适合要求高性能和耐用性的低频应用。丰富的产品组合适合广泛的应用，包括直流电机、电池管理系统、逆变器和 DC-DC 变换器。 • 针对分销合作伙伴的广泛可用性进行了优化\n• 产品符合 JEDEC 标准\n• 高额定电流\n• 双面冷却能力\n• 封装高度低至 0.7 毫米\n• 低寄生 (1-2 nH) 电感封装\n• 100% 无铅（无 RoHS 豁免）;

Infineon

英飞凌

DirectFET

Power MOSFET

Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

文件：288.06 Kbytes 页数：10 Pages

IRF

DirectFET

Power MOSFET

Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

文件：288.06 Kbytes 页数：10 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：288.06 Kbytes 页数：10 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：288.06 Kbytes 页数：10 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：288.06 Kbytes 页数：10 Pages

IRF