| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6633 | DirectFET Power MOSFET Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom 文件：266.71 Kbytes 页数：9 Pages | IRF | IRF | |
IRF6633 | RoHs Compliant Containing No Lead and Bromide Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom 文件：263.73 Kbytes 页数：10 Pages | IRF | IRF | |
IRF6633 | RoHs Compliant Containing No Lead and Bromide | Infineon 英飞凌 | Infineon | |
RoHS Compliant Description The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：268.81 Kbytes 页数：9 Pages | IRF | IRF | ||
DirectFETTM Power MOSFET Description The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：268.81 Kbytes 页数：9 Pages | IRF | IRF | ||
DirectFETPower MOSFET Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g 文件：283.34 Kbytes 页数：10 Pages | IRF | IRF | ||
RoHs Compliant Containing No Lead and Bromide Description The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geom 文件：263.73 Kbytes 页数：10 Pages | IRF | IRF | ||
DirectFETPower MOSFET Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g 文件：283.34 Kbytes 页数：10 Pages | IRF | IRF | ||
DirectFETPower MOSFET Description The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout g 文件：283.34 Kbytes 页数：10 Pages | IRF | IRF | ||
Low Conduction Losses and Switching Losses 文件：268.81 Kbytes 页数：9 Pages | IRF | IRF |
详细参数
- 型号：
IRF6633
- 制造商：
International Rectifier
- 功能描述：
TRANS MOSFET N-CH 20V 16A 7PIN DIRECT-FET MP - Tape and Reel
- 功能描述：
MOSFET N DIRECTFET MP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
QFN |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
询价 | ||
IR |
22+ |
DIRECTFET |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
14700 |
安罗世纪电子只做原装正品货 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
IR |
23+ |
DIRECTFET |
7000 |
询价 | |||
DISCRETE |
4800 |
IR |
4800 |
询价 | |||
IR |
24+ |
DirectFETtradeIso |
7500 |
询价 | |||
IR |
25+ |
QFN |
739 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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