HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：230.54 Kbytes 页数：9 Pages

IRF

GENERATION V TECHNOLOGY

文件：236.1 Kbytes 页数：9 Pages

IRF

GENERATION V TECHNOLOGY

文件：236.1 Kbytes 页数：9 Pages

IRF

Marktech 3mm Ultra Bright Red LEDs

FEATURES • Excellent on/off contrasts • Low drive current • High intensity red light emission • Choice of lens color • Available in two materials • Can be packaged on tape in a reel or in a box

文件：35.66 Kbytes 页数：1 Pages

MARKTECH

Marktech 3mm Ultra Bright Red LEDs

FEATURES • Excellent on/off contrasts • Low drive current • High intensity red light emission • Choice of lens color • Available in two materials • Can be packaged on tape in a reel or in a box

文件：35.66 Kbytes 页数：1 Pages

MARKTECH

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. Features • High radiant intensity • Suitable for pulse operation • Angle of half intens

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VISHAYVishay Siliconix

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