首页 >IRF7402PBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF7402PBF | HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：183.44 Kbytes 页数：8 Pages | IRF | IRF | |
IRF7402PBF | Generation V Technology Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：188.79 Kbytes 页数：8 Pages | IRF | IRF | |
IRF7402PBF | Generation V Technology 文件：188.79 Kbytes 页数：8 Pages | IRF | IRF | |
Generation V Technology 文件：188.79 Kbytes 页数：8 Pages | IRF | IRF |
详细参数
- 型号：
IRF7402PBF
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
8-SOIC |
2375 |
询价 | |||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
25+ |
SOP-8 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
25+ |
SOP8 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
SOP-8 |
4560 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ir |
25+ |
500000 |
行业低价,代理渠道 |
询价 |
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