丝印：IRF7413；Package：SOP-8；Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

文件：422.14 Kbytes 页数：8 Pages

UMW

友台半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

文件：1.84902 Mbytes 页数：6 Pages

KEXIN

科信电子

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：394.37 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：123.19 Kbytes 页数：8 Pages

IRF

丝印：IRF7413；Package：SOP-8；Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

文件：422.14 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7413；Package：SOP-8；MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：394.37 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF7413；Package：SOP-8；30V N-Channel MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

文件：618.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗;

Infineon

英飞凌

Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.16 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：211.18 Kbytes 页数：9 Pages

IRF