丝印：IRF7455；Package：SOP-8；Ultra-Low Gate Impedance

 High Frequency DC-DC Converters with Synchronous Rectification  Lead-Free Applications

Features VDS (V) = 30V RDS(ON) 7.5m (VGS = 10V)
RDS(ON) 9 m (VGS = 4.5V)

文件：373.95 Kbytes 页数：8 Pages

UMW

友台半导体

MOSFET

Features VDS (V) = 40V RDS(ON)

文件：335.85 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=30V, Rds(on)max=0.0071ohm,Id=15A)

SMPS MOSFET Benefits • Ultra-Low RDS(on) at 4.5V VGS • Low Charge and Low Gate Impedance to Reduce Switching Losses • Fully Characterized Avalanche Voltage and Current Applications • High Frequency DC-DC Converters with Synchronous Rectification

文件：167 Kbytes 页数：8 Pages

IRF

丝印：IRF7455；Package：SOP-8；MOSFET

Features VDS (V) = 40V RDS(ON)

文件：335.85 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF7455；Package：SOP-8；Ultra-Low Gate Impedance

 High Frequency DC-DC Converters with Synchronous Rectification  Lead-Free Applications

Features VDS (V) = 30V RDS(ON) 7.5m (VGS = 10V)
RDS(ON) 9 m (VGS = 4.5V)

文件：373.95 Kbytes 页数：8 Pages

UMW

友台半导体

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Ultra-Low RDS(on) at 4.5V VGS ● Low Charge and Low Gate Impedance to Reduce Switching Losses ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Converters with Synchronous Rectification ● Lead-Free

文件：1.02603 Mbytes 页数：8 Pages

IRF

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0532 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

HIGH FREQUENCY DC-DC CONVERTERS WITH SYNCHRONOUS RECTIFICATION

文件：1.0313 Mbytes 页数：8 Pages

IRF

HIGH FREQUENCY DC-DC CONVERTERS WITH SYNCHRONOUS RECTIFICATION

文件：1.0313 Mbytes 页数：8 Pages

IRF