Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：278.95 Kbytes 页数：9 Pages

IRF

P-Channel 30-V (D-S) MOSFET

文件：1.08239 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

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HEXFET Power MOSFET

Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching

文件：65.04 Kbytes 页数：2 Pages

KEXIN

科信电子

VTR TAPE END DETECTOR

β VTR TAPE END DETECOR -LA7205, LA7205A SEOVO INERFACE CIRCUIT FOR VTR USE - LA7110 SYNC DETECTOR, TSG CIRCUIT FOR VTR USE - LA7215

文件：126.77 Kbytes 页数：1 Pages

SANYO

三洋