HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8廓 , ID = 3.3A )

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanch

文件：974.66 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8Ω , ID = 3.3A )

Infineon

英飞凌

HEXFET POWER MOSFET

文件：372.09 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：255.7 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：666.68 Kbytes 页数：9 Pages

Fairchild

仙童半导体