400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs, 10A, 350V/400V

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10A, 400V, 0.550 Ohm, N-Channel Power MOSFET

10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar

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Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

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VishayVishay Siliconix

威世

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Designed to withstand high energy in the avalanche mode and switch efficiently. Also offer a drain-to-source diode with fast recovery time. Designed for high voltage, high speed applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is

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DCCOM

道全

10A 400V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

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FCI

富加宜

isc N-Channel MOSFET Transistor

• DESCRITION • Switch mode power supply • Uninterruptable power supply • High speed power switching • FEATURES • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.55Ω (Max) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust dev

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ISC

无锡固电

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current-ID= 10A@ TC=25°C • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.55 Ω (Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power sup

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

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SUNTAC

N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. 1. HIGH CURRENT SWITCHING 2. UNINTERRUPTIBLE POWER SUPPLY (U

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STMICROELECTRONICS

意法半导体