Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：416.88 Kbytes 页数：24 Pages

AD

亚德诺

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：279.17 Kbytes 页数：22 Pages

AD

亚德诺

Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：118.89 Kbytes 页数：9 Pages

IRF

N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：197.44 Kbytes 页数：9 Pages

IRF

丝印：IRF7401；Package：SOP-8；N-Channel MOSFET

Features Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free VDS (V) = 20V RDS(ON)

文件：402.95 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF7401；Package：SOP-8；N-Channel MOSFET

Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Features VDS (V) = 20V RDS(ON) 22 m (VGS = 4.5V)

文件：408.75 Kbytes 页数：8 Pages

UMW

友台半导体

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：202.97 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：136.18 Kbytes 页数：8 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：188.79 Kbytes 页数：8 Pages

IRF