HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：235.41 Kbytes 页数：9 Pages

IRF

丝印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s

文件：417.3 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa

文件：380.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：158.11 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr

文件：89.4 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

文件：171.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www

文件：238.34 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Switch Mode Power Supply (SMPS)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS ) ● Uninterr

文件：141.67 Kbytes 页数：10 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and    Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod

文件：171.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power

文件：158.11 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司