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IRF6614TRPBF

DirectFETPower MOSFET

Description TheIRF6614PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistingla

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6614TRPBF

Benchmark MOSFETs Product Selection Guide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6614TRPBF

Ideal for CPU Core DC-DC Converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

6614C

6610CSeriesSingle-Output,40-50WGPIBPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

ADRF6614

700MHzto3000MHz,DualPassiveReceiveMixerwithIntegratedPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADRF6614-EVALZ

700MHzto3000MHz,DualPassiveReceiveMixerwithIntegratedPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ATA6614Q

32KFlashMicrocontrollerwithLINTransceiver,5VRegulatorandWatchdog

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

BOXER-6614

FanlessEmbeddedBoxPCwithIntel®Celeron®N2930QuadCore1.83GHz/Celeron®N2807DualCore1.58GHz

Features ■Intel®Celeron®N2930QuadCore1.83GHz/Celeron®N2807Dual Core1.58GHz ■Intel®HDGraphicsEngine ■DDR3L1333MHzSODIMMx1,Memoryupto8GB ■Intel®GigabitEthernetx2 ■VGA+HDMIOutput,SupportsDualView/SimultaneousDisplay ■RS-232/422/485x2,RS-232x2,USB

AAEONAAEON Technology

研扬科技研扬科技(苏州)有限公司

CPH6614

N-ChannelandP-ChannelSiliconMOSFETsGeneral-PurposeSwitchingDevice

SANYOSanyo

三洋三洋电机株式会社

FDS6614A

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •9.3A,30V.RDS(ON)=0.018Ω@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FTLX6614MCC

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar

FTLX6614MCC-XX

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar

FTLX6614MCC-XX

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar

IRF6614

DirectFETPowerMOSFET

Description TheIRF6614combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6614PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF6614PBF

DirectFETPowerMOSFET

Description TheIRF6614PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistingla

IRFInternational Rectifier

英飞凌英飞凌科技公司

ISL6614

DualAdvancedSynchronousRectifiedBuckMOSFETDriverswithProtectionFeatures

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334B,ISL6334Ccontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL6614

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoring

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334,ISL6334Acontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresult

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL6614

DualAdvancedSynchronousRectifiedBuckMOSFETDriverswithProtectionFeatures

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL6614A

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoring

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334,ISL6334Acontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresult

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    IRF6614TRPBF

  • 功能描述:

    MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/IR
14+
DirectFET ST
4800
询价
INFINEON/IR
1907+
NA
4800
20年老字号,原装优势长期供货
询价
INFINEON
1833+
SMD
10
公司原装现货,欢迎咨询
询价
Infineon Technologies
24+
DIRECTFET? ST
30000
晶体管-分立半导体产品-原装正品
询价
IR
21+
SMD
5000
原装现货/假一赔十/支持第三方检验
询价
INFINEON
21+
SMD
4200
十年信誉,只做原装,有挂就有现货!
询价
IR
2024+实力库存
SMD
1234
只做原厂渠道 可追溯货源
询价
INFINEON/IR
14+
4800
DirectFET ST
询价
INFINEON/英飞凌
2023+
SMD
15000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
Infineon(英飞凌)
23+
DirectFET
11177
支持大陆交货,美金交易。原装现货库存。
询价
更多IRF6614TRPBF供应商 更新时间2024-7-15 14:00:00