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IRF6617TRPBF

Lead-Free (Qualified up to 260째C Reflow)

Description TheIRF6617PbFcombinesthelatestHEXFET®powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMicro8™andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutg

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6617TRPBF

Ideal for CPU Core DC-DC Converters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

6617-XX

LinearityCoils

FRONTIER

Frontier Electronics

FRONTIER

6617-XX-LFR

LinearityCoils

FRONTIER

Frontier Electronics

FRONTIER

ATA6617C

8K/16KFlashMicrocontrollerwithLINTransceiver,5VRegulatorandWatchdog

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

EM6617

UltraLowPowerMicrocontrollerwithADCANDEEPROM

EMMICRO

EM Microelectronic - MARIN SA

EMMICRO

F6617SPK

EnhancementModePowerMOSFET

DESCRIPTION TheF6617SPKusesadvancedtrenchtechnologytoprovideexcellentR, lowgatechargeandoperationwithgatevoltagesaslowas2.5Vwhileretaininga12VVrating. ItisESDprotected. Thisdeviceissuitableforuseasaunidirectionalorbi-directionalloadswitch,facilitated

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

FLS6617

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

FLS6617MX

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HM-6617

2Kx8CMOSPROM

Description TheHM-6617isa16,384bitfuselinkCMOSPROMina2Kwordby8-bit/wordformatwith“Three-State”outputs.ThisPROMisavailableinthestandard0.600inchwide24pinSBDIP,the0.300inchwideslimlineSBDIP,andtheJEDECstandard32padCLCC. Features •LowPowerStandbyand

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

HS-6617RH

RadiationHardened2Kx8CMOSPROM

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

HS-6617RH

RadiationHardened2Kx8CMOSPROM

RadiationHardened2Kx8CMOSPROM TheIntersilHS-6617RHisaradiationhardened16KCMOSPROM,organizedina2Kwordby8-bitformat.ThechipismanufacturedusingaradiationhardenedCMOSprocess,andisdesignedtobefunctionallyequivalenttotheHM-6617.Synchronouscircuitdesigntech

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

HS-6617RH-T

RadiationHardened2Kx8CMOSPROM

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

IRF6617

HEXFETPowerMOSFET

Description TheIRF6617combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6617PBF

Lead-Free(Qualifiedupto260째CReflow)

Description TheIRF6617PbFcombinesthelatestHEXFET®powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMicro8™andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutg

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6617PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ISL6617

PWMDoublerwithPhaseSheddingFunctionandOutputMonitoringFeature

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

ISL6617

PWMDoublerwithPhaseSheddingFunctionandOutputMonitoringFeature

TheISL6617utilizesIntersil’sproprietaryPhaseDoubler schemetomodulatetwo-phasepowertrainswithsingle PWMinput.Itdoublesthenumberofphasesthat Intersil’smulti-phasecontrollersISL63xxcansupport. Whentheenablepin(EN_PH_SYNC)ispulledlow,the PWMinputispulledhigh.

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL6617

Dual4-Phase1-PhasePWMControllerforVR12/IMVP7Applications

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL6617

Dual6-Phase1-PhasePWMControllerforVR12/IMVP7Applications

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

详细参数

  • 型号:

    IRF6617TRPBF

  • 功能描述:

    MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/IR
15+
DirectFET ST
4800
询价
INFINEON/IR
1907+
NA
4800
20年老字号,原装优势长期供货
询价
Infineon Technologies
23+
DIRECTFET? ST
30000
晶体管-分立半导体产品-原装正品
询价
INFINEON TECHNOLOGIES
23+
3140
全新原装,有询必回
询价
Infineon(英飞凌)
23+
MG-WDSON-5
11177
支持大陆交货,美金交易。原装现货库存。
询价
IR
2013+
SMD
15000
授权分销IR系列场效应管,大量现货供应IRF6617TRPBF,正品原装,品质保证。
询价
IR
13+
MOSFET
78038
原装分销
询价
IR
17+
QFN
6200
100%原装正品现货
询价
IR
2017+
SMD
25896
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
IR
23+
SMD
5000
原装正品,假一罚十
询价
更多IRF6617TRPBF供应商 更新时间2024-4-19 14:00:00