首页 >IRF640PBF>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF640PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件:1.70972 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF640PBF

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件:6.75207 Mbytes 页数:7 Pages

KERSEMI

IRF640PBF

Power MOSFET

文件:168.14 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF640PBF

18A,200V Heatsink N-Channel Type Power MOSFET

文件:1.00255 Mbytes 页数:6 Pages

THINKISEMI

思祁半导体

IRF640PBF

N-Channel 200 V (D-S) MOSFET

文件:1.60091 Mbytes 页数:6 Pages

VBSEMI

微碧半导体

IRF640PBF

18A,200V Heatsink N-Channel Type Power MOSFET

ThinkiSemi

思祁半导体

详细参数

  • 型号:

    IRF640PBF

  • 功能描述:

    MOSFET N-Chan 200V 18 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY
25+
TO-220
15473
保证进口原装现货假一赔十
询价
VISHAY
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
21+
TO220
1900
绝对原装正品现货,假一罚十
询价
VISHAY/威世
25+
TO-220
32360
VISHAY/威世全新特价IRF640PBF即刻询购立享优惠#长期有货
询价
VISHAY
23+
TO-220
65400
询价
VISHAY
2021
TO-220
5000
全新原装公司现货
询价
VISHAY
100
询价
VISHAY
24+
NA
6800
询价
VISHAY原现
25+
TO-220
25000
全新原装现货,假一赔十
询价
VISHAY/威世
23+/24+
TO220
9865
主推型号,原装正品,终端BOM表可配单,可开13点税
询价
更多IRF640PBF供应商 更新时间2026-4-17 14:06:00