| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRF644 | 250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
IRF644 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicat | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRF644 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技 |  | |
IRF644 | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRF644 | Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | | |
IRF644 | N-Channel Mosfet Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF644 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
Advanced Power MOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.214Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
IRF644
- 功能描述：
MOSFET N-Chan 250V 14 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220 |
2694 |
只做原装进口 免费送样!! |
询价 | ||
IR |
24+ |
TO 220 |
161323 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
06+ |
TO-220 |
6000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ST |
23+ |
TO-220 |
18689 |
询价 | |||
IR |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
询价 | ||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
询价 | ||
IR |
16+ |
原厂封装 |
1000 |
原装现货假一罚十 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
2020+ |
TO220 |
28 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
相关规格书
更多- IRF644PBF
- IRF644STRLPBF
- IRF6609
- IRF6611TR1
- IRF6613TR1PBF-CUTTAPE
- IRF6614TRPBF
- IRF6616
- IRF6617TRPBF
- IRF6618TRPBF
- IRF6619TR1
- IRF6620TR1
- IRF6620TRPBF
- IRF6622TRPBF
- IRF6626
- IRF6628TRPBF
- IRF6633TR1PBF
- IRF6633TRPBF-CUTTAPE
- IRF6635TRPBF
- IRF6637TR1PBF
- IRF6641TR1PBF
- IRF6643TR1PBF
- IRF6644TRPBF
- IRF6645TR1PBF
- IRF6646TR1/BKN
- IRF6646TRPBF
- IRF6648TRPBF
- IRF6655TRPBF
- IRF6665TRPBF
- IRF6674TR1PBF
- IRF6678
- IRF6678TRPBF
- IRF6706S2TR1PBF
- IRF6710S2TRPBF
- IRF6712STRPBF
- IRF6715MTRPBF
- IRF6717MTRPBF
- IRF6721STR1PBF
- IRF6725MTRPBF
- IRF6727MTRPBF
- IRF6775MTRPBF
- IRF6795MTR1PBF
- IRF6797MTR1PBF
- IRF6894MTR1PBF
- IRF710
- IRF7101TRPBF
相关库存
更多- IRF644SPBF
- IRF6607TR1
- IRF6610TR1PBF
- IRF6612TRPBF
- IRF6613TRPBF
- IRF6614TRPBF-CUTTAPE
- IRF6617TR1
- IRF6618TR1
- IRF6619
- IRF6619TR1PBF
- IRF6620TR1PBF
- IRF6621TR1
- IRF6623TRPBF
- IRF6626TR1
- IRF6629TRPBF
- IRF6633TRPBF
- IRF6635TR1PBF-CUTTAPE
- IRF6636TRPBF
- IRF6638TRPBF
- IRF6641TR1PBF/BKN
- IRF6643TRPBF
- IRF6644TRPBF-CUTTAPE
- IRF6645TR1PBF-CUTTAPE
- IRF6646TR1PBF-CUTTAPE
- IRF6648TR1PBF
- IRF6648TRPBF-EL
- IRF6662TRPBF
- IRF6668TRPBF
- IRF6674TRPBF
- IRF6678TR1
- IRF6702M2DTRPBF
- IRF6708S2TR1PBF
- IRF6712STR1PBF
- IRF6715MTR1PBF
- IRF6717MTR1PBF
- IRF6718L2TRPBF
- IRF6725MTR1PBF
- IRF6726MTRPBF
- IRF6729MTRPBF
- IRF6794MTR1PBF
- IRF6795MTRPBF
- IRF6811STRPBF
- IRF6894MTRPBF
- IRF7101PBF
- IRF7103PBF
