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IRF640NLPBF中文资料IRF数据手册PDF规格书
IRF640NLPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF640NLPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
25+ |
N/A |
7500 |
原装现货17377264928微信同号 |
询价 | ||
Infineon(英飞凌) |
2511 |
TO-262 |
4945 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO262 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
24+ |
TO262 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
IR |
2023+ |
TO-262 |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
IR |
23+ |
TO220 |
55022 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
Infineon(英飞凌) |
2447 |
TO262 |
115000 |
1000个/管一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 |
