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IRF630M

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630M

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-CHANNEL200V-0.35W-9ATO-220/TO-220FPMESHOVERLAYMOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-channel200V-0.35廓-9A-TO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-Channel200V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCreepageDistance=4.8mm •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630N

PowerMOSFET

TELTokyo Electron Ltd.

东电电子东京电子有限公司

IRF630N

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630N

HEXFETPowerMOSFET

IRF

International Rectifier

详细参数

  • 型号:

    IRF630L

  • 功能描述:

    MOSFET N-CH 200V 9A TO-262

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
7215
只做全新原装真实现货供应
询价
VISHAY
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
Vishay Siliconix
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品,支持实单
询价
Vishay Siliconix
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
ST
23+
TO-220
9562
询价
ST
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
询价
更多IRF630L供应商 更新时间2025-7-14 10:31:00