Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

文件：224.02 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

SEMICONDUCTORS

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Advanced Power MOSFET

文件：353.28 Kbytes 页数：6 Pages

ARTSCHIP

Advanced N-CHANNEL Power MOSFET

FEATURES\n♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.) ♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.);

ONSEMI

安森美半导体