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IRF634FP

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634FP

N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634N

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

IRF634N

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

IRF634NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NLPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

IRF634NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF634FP

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET

供应商型号品牌批号封装库存备注价格
ST
17+
TO-220
6200
询价
ST
1816+
TO-220F
6523
科恒伟业!只做原装正品,假一赔十!
询价
ST
23+
TO-220
50000
专做原装正品,假一罚百!
询价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
ST
21+
TO-220F
10000
原装现货假一罚十
询价
ST/意法
04+
TO-220F
23000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
ST/意法
23+
TO-220
89630
当天发货全新原装现货
询价
ST
21+
TO-220F
23480
询价
更多IRF634FP供应商 更新时间2025-6-13 16:00:00