Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Lower RDS(ON) : 0.144 Ω(Typ.)

文件：260.95 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.144Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：68.86 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：916.61 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：1.68999 Mbytes 页数：9 Pages

KERSEMI

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.180Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：65.77 Kbytes 页数：2 Pages

ISC

无锡固电