HEXFETPower MOSFET

Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

文件：201.71 Kbytes 页数：11 Pages

IRF

Dual-Channel, Platinum RTD-to-Voltage Signal Conditioner

General Description The MAX6603 dual-channel, platinum RTD-to-voltage signal conditioner excites and amplifies the signal from two external 200Ω platinum-resistive temperature devices (Pt RTD) to achieve high-voltage, level-filtered signals for temperature measurements. The MAX6603 provides a dir

文件：378.34 Kbytes 页数：9 Pages

MAXIM

美信

Ultrahigh-Speed Switching Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting • Halogen free conplaiance

文件：43.61 Kbytes 页数：4 Pages

SANYO

三洋

9 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

文件：242.23 Kbytes 页数：5 Pages

TI

德州仪器