| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6635 | DirectFET Power MOSFET Description The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geo 文件：247.22 Kbytes 页数：9 Pages | IRF | IRF | |
IRF6635 | 采用 DirectFET MX 封装的 30V 单 N 通道 HEXFET 功率 MOSFET，额定电流为 180 安培。 | Infineon 英飞凌 | Infineon | |
DirectFET Power MOSFET Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：242.78 Kbytes 页数：9 Pages | IRF | IRF | ||
Compatible with existing Surface Mount Techniques Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：253.58 Kbytes 页数：10 Pages | IRF | IRF | ||
DirectFET Power MOSFET Description The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geo 文件：247.22 Kbytes 页数：9 Pages | IRF | IRF | ||
Compatible with existing Surface Mount Techniques Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：253.58 Kbytes 页数：10 Pages | IRF | IRF | ||
Compatible with existing Surface Mount Techniques Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：253.58 Kbytes 页数：10 Pages | IRF | IRF | ||
DirectFET Power MOSFET Description The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：242.78 Kbytes 页数：9 Pages | IRF | IRF | ||
Ideal for CPU Core DC-DC Converters 文件：253.58 Kbytes 页数：10 Pages | IRF | IRF | ||
Ideal for CPU Core DC-DC Converters 文件：253.58 Kbytes 页数：10 Pages | IRF | IRF |
技术参数
- ID (@ TA=70°C) max：
25 A
- Ptot(@ TA=25°C) max：
2.8 W
- Ptotmax：
89 W
- Qgd：
17 nC
- QG：
47 nC
- RDS (on)(@4.5V) max：
2.4 mΩ
- RDS (on)max：
1.8 mΩ
- RDS (on)(@10V) max：
1.8 mΩ
- RthJCmax：
1.4 K/W
- Tjmax：
150 °C
- VDSmax：
30 V
- VGSmax：
20 V
- Mounting：
SMD
- Package：
DirectFET MX
- Micro-stencil：
IRF66MX-25
- Polarity：
N
- Moisture Sensitivity Level：
1
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
24+ |
QFN |
632 |
询价 | |||
IOR |
09+ |
DirectFE |
5500 |
原装无铅,优势热卖 |
询价 | ||
IOR |
2005 |
DIRECTFET |
1856 |
原装现货海量库存欢迎咨询 |
询价 | ||
IR |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? MX |
4800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
INFINEON |
25+ |
DIRECTFET? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
21+ |
DirectFET |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MX |
9000 |
原厂渠道,现货配单 |
询价 | ||
IOR |
25+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 |
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