首页 >IRF6609TR1>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF6609TR1 | Low Conduction Losses Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge 文件：264.79 Kbytes 页数：11 Pages | IRF | IRF | |
DirectFETPower MOSFET Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout 文件：271.58 Kbytes 页数：11 Pages | IRF | IRF | ||
IR | IR | |||
IR | IR | |||
IR | IR |
详细参数
- 型号：
IRF6609TR1
- 功能描述：
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
原厂封装 |
964 |
原装现货假一罚十 |
询价 | ||
IRF |
25+ |
SOP-8 |
18000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IRF |
23+ |
SOP-8 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
Infineon Technologies |
21+ |
DIRECTFET? MT |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
24+ |
65230 |
询价 | ||||
INFINEON |
25+ |
DIRECTFET? |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
DIRECTFET |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IRF |
21+ |
SOP-8 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
询价 |
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