DirectFET Power MOSFET

Description The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

文件：248.31 Kbytes 页数：9 Pages

IRF

RoHS compliant containing no lead or bromide

Description The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

文件：260.079 Kbytes 页数：10 Pages

IRF

RoHS compliant containing no lead or bromide

Infineon

英飞凌

DirectFET Power MOSFET

Description The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：266.52 Kbytes 页数：10 Pages

IRF

RoHS compliant containing no lead or bromide

Description The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

文件：260.079 Kbytes 页数：10 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：267.48 Kbytes 页数：10 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：267.48 Kbytes 页数：10 Pages

IRF