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IRF6610

HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM

Description TheIRF6610combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6610PBF

Ideal for CPU Core DC-DC Converters

IRF

International Rectifier

IRF6610TR1PBF

Ideal for CPU Core DC-DC Converters

IRF

International Rectifier

IRF6610TRPbF

Ideal for CPU Core DC-DC Converters

IRF

International Rectifier

ISL6610

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoring

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334,ISL6334Acontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresult

Intersil

Intersil Corporation

ISL6610

Dual4-Phase1-PhasePWMControllerforVR12/IMVP7Applications

Intersil

Intersil Corporation

ISL6610

DualSynchronousRectifiedMOSFETDrivers

VR11.1,4-PhasePWMControllerwithLightLoadEfficiencyEnhancementandLoadCurrentMonitoringFeatures TheISL6334B,ISL6334Ccontrolmicroprocessorcorevoltageregulationbydrivingupto4interleavedsynchronous-rectifiedbuckchannelsinparallel.Thismultiphasearchitectureresul

Intersil

Intersil Corporation

ISL6610

Dual6-Phase1-PhasePWMControllerforVR12/IMVP7Applications

Intersil

Intersil Corporation

ISL6610

DualSynchronousRectifiedMOSFETDrivers

TheISL6610,ISL6610AintegratestwoISL6609,ISL6609A driverswithenablefunctionremovedandisoptimizedto drivetwoindependentpowerchannelsinasynchronousrectifiedbuckconvertertopology.Thesedrivers,combined withanIntersilISL63xxorISL65xxmultiphasePWM controller,forma

Intersil

Intersil Corporation

ISL6610

DualSynchronousRectifiedMOSFETDrivers

Features •5VQuadN-ChannelMOSFETDrivesforTwo SynchronousRectifiedBridges •Pin-to-pinCompatiblewithISL6614(12VDrive) •AdaptiveShoot-ThroughProtection •0.4ΩOn-Resistanceand4ASinkCurrentCapability •SupportsHighSwitchingFrequency -FastOutputRiseandFall -LowTr

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    IRF6610

  • 功能描述:

    MOSFET N-CH 20V 15A DIRECTFET

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
DirectFETSQ
6000
十年配单,只做原装
询价
IR
23+
DirectFETSQ
6000
原装正品,支持实单
询价
IR
22+
DirectFETSQ
25000
只做原装进口现货,专注配单
询价
IR
23+
DirectFETSQ
8000
只做原装现货
询价
IR
23+
DirectFETSQ
7000
询价
IR
2450+
DIRECTFET
6540
只做原厂原装正品终端客户免费申请样品
询价
IR
24+
DirectFETtradeIso
7500
询价
IR
23+
DIRECTF
8650
受权代理!全新原装现货特价热卖!
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
更多IRF6610供应商 更新时间2025-7-17 9:03:00