N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：95.09 Kbytes 页数：9 Pages

PHI

飞利浦

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

文件：237.05 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

文件：228.71 Kbytes 页数：10 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：286.91 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■

文件：84.23 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

FEATURES • Surface mount • Low-profile through-hole • Available in tape and reel • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

文件：237.05 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技