Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.4 Kbytes 页数：11 Pages

IRF

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

文件：160.31 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤150mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

文件：201.95 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

文件：1.19709 Mbytes 页数：11 Pages

KERSEMI

N-Channel MOSFET Transistor

文件：338.66 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：248.99 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

文件：240.04 Kbytes 页数：11 Pages

IRF

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

文件：160.31 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.4 Kbytes 页数：11 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

文件：288.63 Kbytes 页数：2 Pages

ISC

无锡固电