Power MOSFET

文件：171.5 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.64378 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：154.67 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

文件：219.91 Kbytes 页数：8 Pages

IRF