N-channel 200V - 0.15廓 - 15A - TO-220 MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources General features ■ Extremely high dv/dt capability ■ Gate charge minimize

文件：247.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET

ST

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.13916 Mbytes 页数：5 Pages

DOINGTER

杜因特

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：703.84 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：703.84 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司