IRF634N中文资料下载原装现货威世Vishay-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF634N	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634N	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages	IRF	IRF
IRF634NL	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages	IRF	IRF
IRF634NL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 页数：11 Pages	IRF	IRF
IRF634NPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 页数：11 Pages	IRF	IRF
IRF634NS	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages	IRF	IRF
IRF634NS	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay

详细参数

型号：
IRF634N
功能描述：
MOSFET N-Chan 250V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IRF634N	IR	24+	TO-220AB	8866		询价
深圳市勤思达科技有限公司	IRF634N	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市鹏和科技有限公司	IRF634N	IR	24+	TO220	5000	全现原装公司现货	询价
深圳市华来深电子有限公司	IRF634N	IR	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市华斯顿科技有限公司	IRF634N	IR	25+23+	TO-220	27729	绝对原装正品全新进口深圳现货	询价
深圳市威尔健半导体有限公司	IRF634N	NEXPERIA/安世	23+	SOT223	69820	终端可以免费供样,支持BOM配单!	询价
深圳市莱克讯科技有限公司	IRF634N	IR	1923+	TO-220	6896	原装进口现货库存专业工厂研究所配单供货	询价
京海半导体(深圳)有限公司	IRF634N	IR	21+	TO-220	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRF634N	IR	22+	TO-220AB	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	IRF634N	IR	23+	TO-220	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价

更多IRF634N供应商更新时间2025-12-1 10:50:00

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