| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF634N | Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF634N | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages | IRF | IRF | |
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 页数：11 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 页数：11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
IRF634N
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220AB |
8866 |
询价 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
TO220 |
5000 |
全现原装公司现货 |
询价 | ||
IR |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
25+23+ |
TO-220 |
27729 |
绝对原装正品全新进口深圳现货 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT223 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
25+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
22+ |
TO-220AB |
6000 |
十年配单,只做原装 |
询价 | ||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
相关规格书
更多- IRF634NL
- IRF634NPBF
- IRF634NSPBF
- IRF634NSTRRPBF
- IRF634S
- IRF634STRL
- IRF634STRR
- IRF640
- IRF640/D
- IRF640A
- IRF640B_FP001
- IRF640B_FP01F080
- IRF640H
- IRF640LPBF
- IRF640N_R4942
- IRF640NL
- IRF640NLPBF
- IRF640NS
- IRF640NSPBF
- IRF640NSTRLHR
- IRF640NSTRR
- IRF640NSTRRPBF
- IRF640R
- IRF640S2470
- IRF640SPBF
- IRF640STRL
- IRF640STRR
- IRF640T
- IRF641R
- IRF642R
- IRF644
- IRF644FP
- IRF644LPBF
- IRF644NL
- IRF644NPBF
- IRF644NSPBF
- IRF644NSTRLPBF
- IRF644NSTRRPBF
- IRF644S
- IRF644STRL
- IRF644STRR
- IRF645
- IRF646_R4943
- IRF650A
- IRF654
相关库存
更多- IRF634NLPBF
- IRF634NS
- IRF634NSTRLPBF
- IRF634PBF
- IRF634SPBF
- IRF634STRLPBF
- IRF634STRRPBF
- IRF640,127
- IRF640_R4941
- IRF640ACP001
- IRF640B_FP001_Q
- IRF640FP
- IRF640L
- IRF640N
- IRF640NHR
- IRF640NLHR
- IRF640NPBF
- IRF640NSHR
- IRF640NSTRL
- IRF640NSTRLPBF
- IRF640NSTRRHR
- IRF640PBF
- IRF640S
- IRF640S2497
- IRF640ST4
- IRF640STRLPBF
- IRF640STRRPBF
- IRF641
- IRF642
- IRF643
- IRF644B_FP001
- IRF644L
- IRF644N
- IRF644NLPBF
- IRF644NS
- IRF644NSTRL
- IRF644NSTRR
- IRF644PBF
- IRF644SPBF
- IRF644STRLPBF
- IRF644STRRPBF
- IRF646
- IRF647
- IRF650B_FP001
- IRF654A
