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零件编号	下载&订购	功能描述	制造商&上传企业
IRF634N	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634N	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NL	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NS	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NS	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NSTRR	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
IRF634NSTRRPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技
634	文件：141.01 Kbytes Page：2 Pages	LowFrequencies	OSCILENT Oscilent Corporation
634	文件：33.49 Kbytes Page：1 Pages	T-1SubminiatureLamps T-1¼SubminiatureLamps	GILWAY Gilway Technical Lamp
634HHU	文件：249.79 Kbytes Page：1 Pages	DCaxialfans	EBMPAPST ebm-papst
634M-SERIES	文件：330.91 Kbytes Page：3 Pages	634MSeriesD-SubConnectors\|MachinedPins\|HighDensityThreeContactRowswith0.350(8.89mm)FootprintRightAngleBend\|Receptacle Features HighDensityThreeContactRowswith.350(8.89mm)FootprintRightAngleBendwithMachinedContacts .090(2.29mm)ContactSpacing0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination M	EDACEDAC, All Rights Reserved. 亚得电子亚得电子（东莞）有限公司

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详细参数

型号：
IRF634N
功能描述：
MOSFET N-Chan 250V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	IRF634N	IR	23+	TO-220	35890		询价
深圳市特顺芯科技有限公司	IRF634N	IR	08+(pbfree)	TO-220AB	8866		询价
深圳市勤思达科技有限公司	IRF634N	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市博浩通科技有限公司	IRF634N	IR	23+	TO-220AB	8600	全新原装现货	询价
深圳市鹏和科技有限公司	IRF634N	IR	2022+	TO220	5000	全现原装公司现货	询价
深圳市永贝尔科技有限公司	IRF634N	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华来深电子有限公司	IRF634N	IR	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市华斯顿科技有限公司	IRF634N	IR	22+23+	TO-220	27729	绝对原装正品全新进口深圳现货	询价
深圳市百视威讯电子科技有限公司	IRF634N		23+	N/A	90750	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	IRF634N	IR	1746+	TO220	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价

更多IRF634N供应商更新时间2024-4-28 15:00:00

详细参数

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