IRF634NS中文资料IRF数据手册PDF规格书
IRF634NS规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
产品属性
- 型号：
IRF634NS
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
D2-PAK |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
D2-PAK |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-263 |
59405 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT223 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
询价 | ||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 |
