IRF634NS中文资料IRF数据手册PDF规格书
IRF634NS规格书详情
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
产品属性
- 型号：
IRF634NS
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
1816+ |
TO-263 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
IR |
23+ |
TO-263 |
59405 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
1922+ |
TO-263 |
367 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
TO-263 |
28000 |
原装正品 |
询价 | ||
IR/VISHAY |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
TO-263 |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
询价 |
