IRF634NS资料datasheet下载供应代理威世-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF634NS	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NS	文件：301.06 Kbytes Page：11 Pages	Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：301.06 Kbytes 页数：11 Pages	IRF	IRF
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn 文件：222.71 Kbytes 页数：11 Pages	IRF	IRF
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NSTRR	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NSTRRPBF	文件：162.91 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer 文件：162.91 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF634NS	文件：300 bytes Page：1 Pages	HEXFET® Power MOSFET Description\nFifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known	Infineon 英飞凌	Infineon

详细参数

型号：
IRF634NS
功能描述：
MOSFET N-Chan 250V 8.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市美思瑞电子科技有限公司	IRF634NS	IR	22+	D2-PAK	9450	原装正品，实单请联系	询价
深圳市星佑电子有限公司	IRF634NS	IR	05+	原厂原装	1001	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	IRF634NS	IR	24+	D2-Pak	8866		询价
深圳市勤思达科技有限公司	IRF634NS	IR	2015+	D2-Pak	12500	全新原装,现货库存长期供应	询价
深圳市华来深电子有限公司	IRF634NS	IR	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市威尔健半导体有限公司	IRF634NS	NEXPERIA/安世	23+	SOT223	69820	终端可以免费供样,支持BOM配单!	询价
深圳市安富世纪电子有限公司	IRF634NS	IR	23+	D2-PAK	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRF634NS	IR	21+	D2-PAK	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRF634NS	IR	2022+	D2-PAK	5325	原厂代理终端免费提供样品	询价
深圳市胜彬电子有限公司	IRF634NS	IR	22+	TO-263	8000	原装正品支持实单	询价

更多IRF634NS供应商更新时间2025-12-8 16:22:00

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