首页>IRF634NSPBF>规格书详情
IRF634NSPBF中文资料IRF数据手册PDF规格书
IRF634NSPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
产品属性
- 型号：
IRF634NSPBF
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
1950+ |
TO220 |
4856 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
VISHAY |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
TO-263 |
1161 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
24+ |
TO220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
VISHAY |
21+ |
TO-220A |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
VISHAY/威世 |
21+ |
TO-220 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
VISHAY |
1923+ |
TO-220 |
7823 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
VISHAY(威世) |
2447 |
TO-220AB |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
IR |
23+ |
TO-263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 |
