IRF634NS中文资料HEXFET® Power MOSFET数据手册Infineon规格书
IRF634NS规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
技术参数
- 型号：
IRF634NS
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
24+ |
NA/ |
4411 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
VISHAY |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 | ||
VISHAY |
1645+ |
TO-220AB |
8500 |
只做原装进口,假一罚十 |
询价 | ||
IR |
23+ |
D2-PAK |
6000 |
原装正品，支持实单 |
询价 | ||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
询价 | ||
IR |
23+ |
D2-PAK |
7000 |
询价 |
