IRF634NS数据手册Infineon中文资料规格书
IRF634NS规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
技术参数
- 型号：
IRF634NS
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
D2-PAK |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
22+ |
TO-263 |
87916 |
询价 | |||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
24+ |
NA/ |
4411 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
23+ |
TO-263 |
59405 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
D2-PAK |
7300 |
专注配单,只做原装进口现货 |
询价 |
