首页>IRF634NLPBF>规格书详情
IRF634NLPBF中文资料IRF数据手册PDF规格书
IRF634NLPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
产品属性
- 型号：
IRF634NLPBF
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
1198 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
1922+ |
TO-263 |
367 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
11+ |
TO-220 |
11000 |
询价 | |||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
询价 | ||
VISHAY |
25+23+ |
TO-220 |
27730 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
NEW |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
VISHAY |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
询价 | ||
VishayIR |
24+ |
TO-262 |
9 |
询价 |
