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IRF634NLPBF中文资料IRF数据手册PDF规格书
IRF634NLPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
产品属性
- 型号：
IRF634NLPBF
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
1198 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
VISHAY/威世 |
11+ |
TO-220 |
11000 |
询价 | |||
VISHAY |
25+23+ |
TO-220 |
27730 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
VishayIR |
24+ |
TO-262 |
9 |
询价 | |||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
询价 | ||
IR |
23+ |
TO-262 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-262 |
7000 |
询价 | |||
VISHAY/威世 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 |
