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IRF634NLPBF规格书详情
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
产品属性
- 型号:
IRF634NLPBF
- 功能描述:
MOSFET N-Chan 250V 8.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
20+ |
TO-220 |
11000 |
进口原装现货,假一赔十 |
询价 | ||
IR |
1816+ |
TO-262 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
VISHAY |
23+ |
TO-220 |
13500 |
原厂原装正品 |
询价 | ||
IR |
23+ |
D2-Pak |
8600 |
全新原装现货 |
询价 | ||
VISHAY |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
询价 | ||
IR |
23+ |
TO-263 |
35890 |
询价 | |||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 |