IRF634N中文资料IRF数据手册PDF规格书
IRF634N规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
产品属性
- 型号：
IRF634N
- 功能描述：
MOSFET N-Chan 250V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
11+ |
TO-220 |
11000 |
询价 | |||
IR |
23+ |
TO-263 |
28000 |
原装正品 |
询价 | ||
IR |
23+ |
TO-220 |
35890 |
询价 | |||
VISHAY |
23+ |
TO-220 |
13500 |
原厂原装正品 |
询价 | ||
IR |
25+23+ |
TO-220 |
27729 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR/VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
IR |
24+ |
NA/ |
4411 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
24+ |
TO-220AB |
8866 |
询价 | |||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
询价 |
