Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：579.72 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-TrenchPower MOSFET

文件：1.53489 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：5.97495 Mbytes 页数：8 Pages

KERSEMI

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

文件：2.10068 Mbytes 页数：8 Pages

IRF

9A,200V Heatsink N-Channel Type Power MOSFET

文件：1.03175 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

9A,200V Heatsink N-Channel Type Power MOSFET

ThinkiSemi

思祁半导体