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IRF630M

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630M

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY™process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources.IsolatedTO-220optionsimplifiesassemblyandcutsriskofaccidentalsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-Channel 200 V (D-S) MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) •SinktoLeadCreepageDistance=4.8mm •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF630M_06

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630MFP

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630N

PowerMOSFET

TEL

TRANSYS Electronics Limited

IRF630N

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF630M

  • 制造商:

    ST

  • 功能描述:

    N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET

供应商型号品牌批号封装库存备注价格
ST
23+
TO-220
9562
询价
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
询价
ST
24+
TO2203
26
询价
ST
05+
原厂原装
4708
只做全新原装真实现货供应
询价
ST
17+
TO-220
6200
询价
ST
23+
TO220-3
9280
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
ST
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
24+
DIP3
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
ST
23+
TO-220
50000
专做原装正品,假一罚百!
询价
更多IRF630M供应商 更新时间2025-5-19 9:00:00