Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：218.73 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：97.84 Kbytes 页数：9 Pages

PHI

飞利浦

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the

文件：175.32 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.35 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 A

文件：85.22 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：1.96765 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

Power MOSFET VDSS =200V, RDS(on) = 0.40 ohm, ID = 9.0 A

文件：142.44 Kbytes 页数：1 Pages

TEL

N-Channel MOSFET

■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON)

文件：1.81195 Mbytes 页数：4 Pages

KEXIN

科信电子

N-channel TrenchMOS transistor

文件：923.6 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the

文件：175.32 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

文件：986.65 Kbytes 页数：8 Pages

IRF