N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：209.86 Kbytes 页数：11 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.06 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable op

文件：119.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

文件：74.59 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Fast Switching Speed

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

文件：1.58717 Mbytes 页数：2 Pages

KERSEMI

Power MOSFET

文件：173.94 Kbytes 页数：2 Pages

TEL

HEXFET Power MOSFET

文件：240.54 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

文件：339.05 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicatio

文件：289.01 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.06 Kbytes 页数：11 Pages

IRF