| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel Power MOSFETs 200V, 9.3A, 0.30? Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve 文件：209.86 Kbytes 页数：11 Pages | Fairchild 仙童半导体 | Fairchild | ||
Advanced Process Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：340.74 Kbytes 页数：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：340.74 Kbytes 页数：11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：155.06 Kbytes 页数：11 Pages | IRF | IRF | ||
N-Channel Power MOSFETs 200V, 9.3A, 0.30? Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve 文件：209.86 Kbytes 页数：11 Pages | Fairchild 仙童半导体 | Fairchild | ||
Advanced Process Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：340.74 Kbytes 页数：11 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：340.74 Kbytes 页数：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：240.54 Kbytes 页数：11 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor 文件：339.05 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
HEXFET Power MOSFET 文件：240.54 Kbytes 页数：11 Pages | IRF | IRF |
技术参数
- OPN：
IRF630NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
200 V
- RDS (on) @10V max：
300 mΩ
- ID @25°C max：
9.3 A
- QG typ @10V：
23.3 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思达科技有限公司主营IR系列,现货供应IRF630N,全新原装,正品供应。 |
询价 | ||
IR |
25+ |
TO220 |
32360 |
IR全新特价IRF630N即刻询购立享优惠#长期有货 |
询价 | ||
IR |
25+ |
TO-220 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
2019 |
TO-220 |
26500 |
原装正品钻石品质假一赔十 |
询价 | ||
IR |
23+ |
TO-220 |
2800 |
原厂原装正品 |
询价 | ||
IR |
24+ |
TO 220 |
161568 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
03+ |
原厂原装 |
10000 |
全新原装 绝对有货 |
询价 |
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